?? features ?? advan ced proces s technolog y ?? ultra low on-re sis tance ?? dy namic dv/dt rating ?? fast sw itc hing ?? fully avalan che rated ?? absolut e maxim um rating s t a = 2 5 ?? parameter sym bol rating unit con tinuous drain cu rre nt, v gs @ 10v, t c = 25 ?? i d 110 con tinuous drain cu rre nt, v gs @ 10v, t c = 100 ?? i d 80 pulsed drain cur rent*1 i dm 390 pow er dissipation p d 200 w linea r der ating factor 1.3 w / ?? linea r der ating factor v gs ? 20 v avalanche cu rre nt *1 i ar 62 a rep etitive avalanche energ y *1 e ar 20 m j peak diode recove ry dv /dt *2 dv/dt 5 v/ns junct ion-to- case r c 0.75 (m ax ) case-to- sink, flat, greased surface r s 0.5 junct ion-to- am bient r a 62 (m ax ) oper ating junct ion and storage tem pera ture ran ge t j .t stg -55 to + 175 ?? *1 repe tit ive rating; pulse w idth lim ited by m ax . j unction tem pera ture. *2 i sd ? 62a, d i /d t ? 207a/ , v dd ? v (br)dss ,t j ? 175 ?? a ?? /w 1 to-220 2 3 (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 0.05 1. gate drain 2. 3. source 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s IRF3205 smd t ype mosfet smd type ic mosfet dip type smd type ic mosfet dip type product specification
s m d ty p e i c s m d ty p e ?? el ectrical characteristics t a = 2 5 ?? parameter sym bol testc onditons min typ ma x unit dra in-to-sour ce b reakdow n voltage v dss v gs = 0v, i d = 250 55 v stati c dra in-to-sour ce on-resistance r ds(on) v gs = 10v, i d = 62a*1 8.0 m gate threshold voltage v gs(th) v ds = v gs , i d = 250 2.0 4.0 v v ds = 55v, v gs = 0v 25 v ds = 44v, v gs = 0v, t j = 150 ?? 250 gate-to-sou rce forw ard le akage v gs = 20v 100 gate-to-sou rce reve rse leakage v gs = -20v -100 total gate charg e q g i d = 62a 146 gate-to-sou rce char ge q gs v ds = 44v 35 gate-to-d rain ("m iller") char ge q gd v gs = 10v,*1 54 turn- on delay tim e t d(on ) v dd = 28v 14 rise tim e t r i d = 62a 101 turn- off delay tim e t d(of f) r g = 4.5 50 fall tim e t f v gs =10v *1 65 internal dra in inductance l d 4.5 internal source inductance l s 7.5 input capacitance c i ss v gs = 0v 3247 output capa cit ance c oss v ds = 25v 781 rev erse transfer cap acitance c rss ? = 1.0mh z 211 rev erse recove ry tim e t rr t j = 25 ?? , i f = 62a 69 104 ns rev erse recove ryc harg e q rr d i /d t = 100a/ *1 143 215 nc forw ard tur n-on tim e t on intrinsic turn-on ti m e is negligib le (turn-o n is dominated by l s +l d ) con tinuous source curre nt ? body diod e) i s 110 pulsed s ource cur rent ? body diod e) *2 i sm 390 diode forw ard voltage v sd t j = 25 ?? , i s = 62a, v gs = 0v*1 1.3 v *1 pulse w idth ? 400; duty cycle ? 2%. *2 repe tit ive rating; pulse w idth lim ited by m ax . j unction tem pera ture. dra in-to-sour ce leakage cur rent nh na nc i dss ns pf a i gss m o s f e t 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s IRF3205 smd t ype mosfet smd type ic mosfet dip type smd type ic mosfet dip type product specification
s m d ty p e i c s m d ty p e t r a n s i s t o r s fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c ) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 107a 1 10 100 1000 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 62a v = 11v ds v = 27v ds v = 44v ds fig 4. normalized on-resistance vs. temperature 4008-318-123 sales@twtysemi.com 3 of 4 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s IRF3205 smd t ype mosfet smd type ic mosfet dip type smd type ic mosfet dip type product specification
s m d ty p e i c s m d ty p e t r a n s i s t o r s fig 7. typical source-drain diode forward voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package fig 9. maximum drain current vs. case temperature fig 12c. maximum avalanche energy vs. drain current a 25 50 75 100 125 150 175 0 100 200 300 400 500 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 44a 62a fig 11. maximum effective transient thermal impedance, junction-to-case fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRF3205 4008-318-123 sales@twtysemi.com 4of 4 http://www.twtysemi.com smd t ype mosfet smd type ic mosfet dip type smd type ic mosfet dip type product specification
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